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October 2013
FCD4N60
N-Channel SuperFET ? MOSFET
600 V, 3.9 A, 1.2 ?
Features
? 650 V @T J = 150 °C
? Typ. R DS(on) = 1.0 ?
? Ultra Low Gate Charge (Typ. Q g = 12.8 nC)
? Low Effective Output Capacitance (Typ. C oss .eff = 32 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? Lighting
? AC-DC Power Supply
? Solar Inverter
D
D
G
S
D-PAK
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted
S
Symbol
Parameter
FCD4N60TM
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
600
3.9
2.5
V
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
11.7
±30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
128
3.9
5.0
4.5
50
0.4
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FCD4N60TM
Unit
R ? JC
R ? JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.5
83
o
o
C/W
C/W
?2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
1
www.fairchildsemi.com
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